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High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier


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FEATURES
? Very low profile - typical height of 1.1 mm
? Ideal for automated placement
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
? Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
? Halogen-free according to IEC 61249-2-21 definition


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發(fā)布公司: Vishay
更新時間:2011-11-01
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